CPC H01J 37/3045 (2013.01) [H01J 2237/2446 (2013.01); H01J 2237/24578 (2013.01)] | 18 Claims |
1. A beamline ion implantation system, comprising:
an ion source to generate ions;
extraction optics disposed proximate the ion source to extract the ions from the ion source;
a mass analyzer to receive the ions from the ion source;
a mass resolving device disposed after an output of the mass analyzer;
a collimator disposed after the mass resolving device; and
a calibration sensor, that is introduced into a path of the ions after the mass resolving device and before the collimator, wherein the calibration sensor comprises two or more Faraday sensors arranged in a height direction, and a current collected by each of the two or more Faraday sensors is used to provide information about a total current and a position of the ions in the height direction, wherein the beamline ion implantation system is tuned based on the position of the ions in the height direction.
|