US 11,810,754 B2
System using pixelated faraday sensor
Eric D. Hermanson, Georgetown, MA (US); Nevin Clay, Charlestown, MA (US); Antonella Cucchetti, Manchester by the Sea, MA (US); Philip Layne, Salem, MA (US); Sudhakar Mahalingam, Lexington, MA (US); and Michael Simmons, Auston, TX (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Dec. 9, 2021, as Appl. No. 17/546,667.
Prior Publication US 2023/0187171 A1, Jun. 15, 2023
Int. Cl. H01J 37/304 (2006.01)
CPC H01J 37/3045 (2013.01) [H01J 2237/2446 (2013.01); H01J 2237/24578 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A beamline ion implantation system, comprising:
an ion source to generate ions;
extraction optics disposed proximate the ion source to extract the ions from the ion source;
a mass analyzer to receive the ions from the ion source;
a mass resolving device disposed after an output of the mass analyzer;
a collimator disposed after the mass resolving device; and
a calibration sensor, that is introduced into a path of the ions after the mass resolving device and before the collimator, wherein the calibration sensor comprises two or more Faraday sensors arranged in a height direction, and a current collected by each of the two or more Faraday sensors is used to provide information about a total current and a position of the ions in the height direction, wherein the beamline ion implantation system is tuned based on the position of the ions in the height direction.