CPC H01F 10/3254 (2013.01) [G11C 11/161 (2013.01); H01F 10/3272 (2013.01); H10B 61/00 (2023.02); H10N 50/01 (2023.02); H10N 50/10 (2023.02); H10N 50/80 (2023.02); H10N 50/85 (2023.02)] | 20 Claims |
1. A magnetic structure for a magnetic device, the magnetic structure comprising:
a seed layer;
a magnetic reference layer formed over the seed layer;
a spacer on the magnetic reference layer, the spacer comprising:
a first texture breaking layer provided on the magnetic reference layer,
a magnetic bridge layer provided on the first texture breaking layer, and
a second texture breaking layer provided on the magnetic bridge layer; and
a magnetic pinned or hard layer on the spacer,
wherein the magnetic reference layer and the magnetic pinned or hard layer are magnetically coupled across the spacer through direct exchange interaction, and
wherein the magnetic device is a top-pinned device having the magnetic pinned or hard layer positioned farther away from the seed layer relative to the magnetic reference layer.
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