| CPC G11C 16/30 (2013.01) [G11C 16/0483 (2013.01); G11C 16/26 (2013.01); H02M 3/07 (2013.01); H10B 43/27 (2023.02)] | 20 Claims |
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1. A method, comprising:
performing a first charge phase of a first multi-phase circuit of a hybrid charge pump, the first multi-phase circuit comprising a first semiconductor device, a second semiconductor device, a first input node, and a first capacitor, the first charge phase comprising:
closing the first semiconductor device by applying a non-negative voltage to a gate of the first semiconductor device, to create a first current path from the first input node to the first capacitor, the first semiconductor device comprising a depletion-mode n-channel device having a negative threshold voltage thereby allowing current to pass through when the non-negative voltage is applied to the gate of the depletion-mode n-channel device; and
charging the first capacitor based on a first input voltage at the first input node; and
performing a first boost phase of the first multi-phase circuit, the first boot phase comprising:
providing a first boost voltage to the charged first capacitor;
closing the second semiconductor device by applying a gate voltage lower than a source voltage of the second semiconductor device, after the first boost voltage is provided to the charged first capacitor, the second semiconductor device comprising an enhancement-mode p-channel device; and
generating a first voltage output at an output node of the hybrid charge pump based on a first charge voltage stored at the first capacitor and the first boost voltage.
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