US 11,809,802 B2
Process manufacturing method, method for adjusting threshold voltage device, and storage medium
Abraham Yoo, Shanghai (CN); Ying Jin, Shanghai (CN); and Jisong Jin, Shanghai (CN)
Assigned to Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai (CN); and Semiconductor Manufacturing International (Beijing) Corporation, Beijing (CN)
Filed by Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai (CN); and Semiconductor Manufacturing International (Beijing) Corporation, Beijing (CN)
Filed on Mar. 11, 2021, as Appl. No. 17/198,462.
Claims priority of application No. 202010245619.4 (CN), filed on Mar. 31, 2020.
Prior Publication US 2021/0303768 A1, Sep. 30, 2021
Int. Cl. G06F 30/398 (2020.01); H01L 21/321 (2006.01); H01L 29/40 (2006.01); G06F 119/08 (2020.01); G06F 119/18 (2020.01)
CPC G06F 30/398 (2020.01) [H01L 21/321 (2013.01); H01L 29/401 (2013.01); G06F 2119/18 (2020.01)] 26 Claims
OG exemplary drawing
 
1. A process manufacturing method, comprising:
determining a type of to-be-formed MOS device and a corresponding threshold voltage interval;
obtaining, according to the MOS device type and the corresponding threshold voltage interval, a corresponding threshold voltage adjustment process by querying a pre-configured first mapping relationship of the threshold voltage interval and a second mapping relationship of the threshold voltage interval;
establishing a process flow according to the corresponding threshold voltage adjustment process, wherein:
the first mapping relationship is a mapping relationship between the threshold voltage interval and the MOS device type, and
the second mapping relationship is a correspondence between the threshold voltage interval in the first mapping relationship and a threshold voltage adjustment process formed by at least one adjustment process selected from a preset process flow, the threshold voltage adjustment process causing a threshold voltage to be in the corresponding threshold voltage interval under the action of a total threshold voltage offset.