US 11,809,721 B2
Memory sub-system temperature regulation by modifying a data parameter
Jacob Sloat, Bloomington, MN (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Jun. 11, 2021, as Appl. No. 17/345,785.
Application 17/345,785 is a continuation of application No. 16/717,460, filed on Dec. 17, 2019, granted, now 11,036,413.
Prior Publication US 2021/0318822 A1, Oct. 14, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. G06F 3/06 (2006.01); G06F 1/20 (2006.01)
CPC G06F 3/0634 (2013.01) [G06F 1/206 (2013.01); G06F 3/0617 (2013.01); G06F 3/0679 (2013.01)] 20 Claims
OG exemplary drawing
 
11. A system, comprising:
a memory device comprising a first temperature component that operates using a data transfer rate; and
a memory sub-system controller coupled to the first memory device and comprising a second temperature component, the memory sub-system controller to perform operations comprising:
determining, by the first temperature component, a first temperature value of the first memory device;
determining, by the second temperature component, a second temperature value of the memory sub-system controller;
modifying the data transfer rate and a quantity of data to be transferred to the memory device in response to:
the first temperature value exceeding a first threshold temperature value; or
the second temperature value exceeding a second threshold temperature value; or
both;
wherein:
modifying the data transfer rate comprises introducing a delay between portions of the data as the data is transferred; and
modifying the quantity of data is further based on a start of memory space to be saved in the memory device and an end of the memory space to be saved.