US 11,808,977 B2
Structures and methods for high speed interconnection in photonic systems
Weiwei Song, San Jose, CA (US); Stefan Rusu, Sunnyvale, CA (US); and Mohammed Rabiul Islam, Austin, TX (US)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed on Dec. 13, 2022, as Appl. No. 18/080,684.
Application 18/080,684 is a continuation of application No. 17/007,743, filed on Aug. 31, 2020, granted, now 11,550,102.
Prior Publication US 2023/0114059 A1, Apr. 13, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G02B 6/132 (2006.01); G02B 6/136 (2006.01); H04B 10/25 (2013.01); G02B 6/12 (2006.01)
CPC G02B 6/132 (2013.01) [G02B 6/136 (2013.01); H04B 10/25 (2013.01); G02B 2006/12038 (2013.01); G02B 2006/12061 (2013.01); G02B 2006/12164 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A photonic device, comprising:
a substrate;
a plurality of metal layers on the substrate;
a contact layer comprising a plurality of contacts over the plurality of metal layers;
a photonic material layer disposed on the contact layer; and
a waveguide on the photonic material layer, wherein
the photonic material layer comprises: a first photonic material sublayer, a first dielectric sublayer, a second photonic material sublayer, and a second dielectric sublayer, and
each of the first photonic material sublayer and the second photonic material sublayer is formed on and in contact with the contact layer.