US 11,807,652 B2
Tungsten compound, raw material for thin film formation and method for producing thin film
Akio Saito, Tokyo (JP); Tsubasa Shiratori, Tokyo (JP); and Yutaro Aoki, Tokyo (JP)
Assigned to ADEKA CORPORATION, Tokyo (JP)
Appl. No. 16/631,245
Filed by ADEKA CORPORATION, Tokyo (JP)
PCT Filed Jul. 4, 2018, PCT No. PCT/JP2018/025392
§ 371(c)(1), (2) Date Jan. 15, 2020,
PCT Pub. No. WO2019/039103, PCT Pub. Date Feb. 28, 2019.
Claims priority of application No. 2017-158565 (JP), filed on Aug. 21, 2017.
Prior Publication US 2020/0216479 A1, Jul. 9, 2020
Int. Cl. C07F 11/00 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); H01L 21/02 (2006.01)
CPC C07F 11/00 (2013.01) [C23C 16/405 (2013.01); C23C 16/45553 (2013.01); H01L 21/0228 (2013.01); H01L 21/02175 (2013.01); H01L 21/02205 (2013.01)] 2 Claims
OG exemplary drawing
 
1. A tungsten compound comprising at least one selected from the group consisting of Compound No. 1 to No. 6, No. 9 to No. 14, No. 33 to No. 43, and No. 44:

OG Complex Work Unit Chemistry

OG Complex Work Unit Chemistry

OG Complex Work Unit Chemistry

OG Complex Work Unit Chemistry
wherein Me represents a methyl group, Et represents an ethyl group, nPr represents an n-propyl group, iPr represents an isopropyl group, nBu represents an n-butyl group, and tBu represents a tert-butyl group.