US 11,806,964 B2
Dopant for improving casting and electroplating performance
Barbara Diane Young, Raymore, MO (US); and Steven James Sedlock, Raymore, MO (US)
Assigned to Honeywell Federal Manufacturing & Technologies, LLC, Kansas City, MO (US)
Filed by Honeywell Federal Manufacturing & Technologies, LLC, Kansas City, MO (US)
Filed on Aug. 31, 2021, as Appl. No. 17/462,273.
Prior Publication US 2023/0063553 A1, Mar. 2, 2023
Int. Cl. B32B 15/01 (2006.01); C25D 3/44 (2006.01); C25D 3/38 (2006.01); C25D 7/12 (2006.01)
CPC B32B 15/017 (2013.01) [B32B 15/012 (2013.01); Y10T 428/1275 (2015.01); Y10T 428/12903 (2015.01); Y10T 428/12944 (2015.01); Y10T 428/12951 (2015.01)] 17 Claims
OG exemplary drawing
 
1. A cast part comprising:
a first base material, and
a second material mixed with the first base material,
wherein the second material comprises a doped viscosity reducing semiconductor material that is doped with an electrically active dopant to thereby increase an electrical conductivity of the second material absent the electrically active dopant,
wherein the cast part is formed in part from the mixture of the first base material and the second material, such that the cast part has a substantially uniform electrical conductivity,
wherein the doped viscosity reducing semiconductor material reduces a viscosity of the mixture such that the viscosity of the mixture is lower than a viscosity of the first base material alone,
wherein the second material is at least partially segregated out from the first base material; and
a uniform plating layer disposed on at least a portion of an outer surface of the cast part,
wherein a uniformity of the uniform plating layer is improved due to the substantially uniform electrical conductivity of the cast part.