| US 7,615,866 B2 | ||
| Contact surrounded by passivation and polymide and method therefor | ||
| James Jen-Ho Wang, Phoenix, Ariz. (US); and Paul T. Hui, Mesa, Ariz. (US) | ||
| Assigned to Freescale Semiconductor, Inc., Austin, Tex. (US) | ||
| Filed on May 23, 2006, as Appl. No. 11/419,798. | ||
| Prior Publication US 2007/0275549 A1, Nov. 29, 2007 | ||
| Int. Cl. H01L 23/48 (2006.01); H01L 23/52 (2006.01) | ||
| U.S. Cl. 257—751 [257/737; 257/779; 257/784; 257/E23.021] | 5 Claims |
| 1. A semiconductor device, comprising:
an active circuitry region;
a contact region exclusive of the active circuitry region;
a last interconnect layer comprising aluminum over the active circuitry and the contact region;
a passivation layer over the last interconnect layer having a first opening bounded by a sidewall of the passivation layer
and over the contact region;
a polyimide layer over the passivation layer having a second opening that is within the first opening so that the polyimide
layer separates the second opening from the sidewall of the passivation layer;
a barrier metal layer comprising titanium tungsten over the polyimide layer and contacting the last interconnect layer in
the second opening;
a bond pad metal comprising gold over the barrier metal having a contact portion outside the contact region and over the active
circuitry region; and
a wire bond on the contact portion; wherein:
the barrier metal layer, the bond pad metal, and the last interconnect layer form an electrical contact; and
the polyimide layer improves durability of the contact by separating the second opening from the sidewall of the passivation
layer.
|