| US 7,615,806 B2 | ||
| Method for forming a semiconductor structure and structure thereof | ||
| Voon-Yew Thean, Austin, Tex. (US); Jian Chen, Austin, Tex. (US); Bich-Yen Nguyen, Austin, Tex. (US); Mariam G. Sadaka, Austin, Tex. (US); and Da Zhang, Austin, Tex. (US) | ||
| Assigned to Freescale Semiconductor, Inc., Austin, Tex. (US) | ||
| Filed on Oct. 31, 2005, as Appl. No. 11/263,119. | ||
| Prior Publication US 2007/0099361 A1, May 03, 2007 | ||
| Int. Cl. H01L 27/10 (2006.01) | ||
| U.S. Cl. 257—206 [438/199; 257/E27.064] | 19 Claims |
| 1. A semiconductor structure, comprising:
a first region having a first conductivity type and having a sidewall;
a second region having a second conductivity type, wherein the second conductivity type is different than the first conductivity
type;
an active area sidewall spacer adjacent the sidewall of the first region, wherein the active area sidewall spacer comprises
an insulating layer;
a gate dielectric overlying at least a portion of the first region and at least a portion of the active area sidewall spacer;
a gate electrode overlying the gate dielectric; and
a second insulating layer, wherein each of the first region, the second region, and the active area sidewall spacer is on
and in physical contact with the second insulating layer.
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