| US 7,615,798 B2 | ||
| Semiconductor light emitting device having an electrode made of a conductive oxide | ||
| Daisuke Sanga, Tokushima (Japan); Takeshi Kususe, Tokushima (Japan); Takahiko Sakamoto, Anan (Japan); and Hisashi Kasai, Anan (Japan) | ||
| Assigned to Nichia Corporation, Tokushima (Japan) | ||
| Filed on Mar. 29, 2005, as Appl. No. 11/91,915. | ||
| Claims priority of application No. 2004-094514 (JP), filed on Mar. 29, 2004. | ||
| Prior Publication US 2005/0212002 A1, Sep. 29, 2005 | ||
| Int. Cl. H01L 29/22 (2006.01); H01L 29/24 (2006.01) | ||
| U.S. Cl. 257—99 [257/103] | 20 Claims |
| 1. A semiconductor light emitting device comprising:
a first conductive type semiconductor layer, a light emitting layer, and a second conductive type semiconductor layer stacked
in this order;
electrodes respectively connected to the first conductive type and the second conductive type semiconductor layers;
the electrode connected to said second conductive type semiconductor layer comprising a lower conductive oxide film, an upper
conductive oxide film disposed on said lower conductive oxide film so that a portion of a surface of said lower conductive
oxide film is exposed, and a metal film disposed on said upper conductive oxide film; and
said upper conductive oxide film and said lower conductive oxide film each comprising an oxide including at least one element
selected from the group consisting of zinc (Zn), indium (In), tin (Sn), and magnesium (Mg).
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