| US 7,615,796 B2 | ||
| Light emitting diode having an electrode buffer layer | ||
| Chih-Chiang Lu, Hsinchu (Taiwan); Ling-Chin Huang, Hsinchu (Taiwan); Jen-Shul Wang, Hsinchu (Taiwan); Wen-Huang Liu, Hsinchu (Taiwan); and Min-Hsun Hsieh, Hsinchu (Taiwan) | ||
| Assigned to Epistar Corporation, Hsinchu (Taiwan) | ||
| Filed on Oct. 19, 2005, as Appl. No. 11/256,400. | ||
| Claims priority of application No. 93133411 A (TW), filed on Nov. 03, 2004. | ||
| Prior Publication US 2006/0091419 A1, May 04, 2006 | ||
| Int. Cl. H01L 33/00 (2006.01); H01L 27/15 (2006.01) | ||
| U.S. Cl. 257—98 [257/79; 257/97; 257/99; 257/100; 257/E33.028; 257/E33.043; 257/E33.063; 438/22; 438/47; 438/48] | 21 Claims |
| 1. A light emitting diode, comprising:
a substrate;
an adhesive layer disposed on the substrate;
a conductive layer disposed on the adhesive layer, wherein the conductive layer has an upper surface and a lower surface,
the distance between the upper surface and the substrate is greater than that between the lower surface and the substrate,
and the upper surface has a first surface region, a second surface region, and a third surface region;
a light emitting stack disposed on the first surface region, wherein the light emitting stack comprises:
a first semiconductor stack;
a light emitting layer on the first semiconductor stack; and
a second semiconductor stack on the light emitting layer, and wherein the first semiconductor stack and the conductive layer
is distinguishable;
an electrode buffer layer disposed on the second surface region;
a first electrode conformably formed around the electrode buffer layer, the first electrode extending downward and being in
direct contact with the conductive layer in the third surface region; and
a second electrode disposed on the light emitting stack.
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