| US 7,615,763 B2 | ||
| System for magnetic scanning and correction of an ion beam | ||
| Bo H. Vanderberg, Gloucester, Mass. (US); Robert D. Rathmell, Murphy, Tex. (US); and Edward C. Eisner, Lexington, Mass. (US) | ||
| Assigned to Axcelis Technologies, Inc., Beverly, Mass. (US) | ||
| Filed on Sep. 19, 2006, as Appl. No. 11/523,148. | ||
| Prior Publication US 2008/0067436 A1, Mar. 20, 2008 | ||
| Int. Cl. H01J 37/317 (2006.01) | ||
| U.S. Cl. 250—492.21 [250/492.1; 250/492.2; 250/492.3; 250/396 ML] | 27 Claims |
| 1. An ion implantation system comprising:
an ion source that generates an ion beam along a beam path;
a mass analysis component downstream of the ion source that performs mass analysis on the ion beam;
a magnetic scanner downstream of the mass analysis component that generates a time varying oscillatory magnetic field across
a portion of the beam path;
a constant magnetic field generator proximate to the magnetic scanner that generates a static magnetic field across the beam
path to mitigate zero field effects, the constant magnetic field generator comprising:
a set of entrance magnets proximate to an entrance of the magnetic scanner and having a first polarity arrangement; and
a set of exit magnets proximate to an exit of the magnetic scanner and having a second polarity arrangement that is opposite
the first polarity arrangement;
a parallelizer downstream of the magnetic scanner that redirects the ion beam parallel to a common axis; and
an end station positioned downstream of the parallelizer component that receives the ion beam;
wherein the static magnetic field generated by the constant magnetic field generator varies in amplitude along the beam path
from an entrance of the magnetic scanner to an exit of the magnetic scanner.
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