| US 7,615,491 B2 | ||
| Defectivity and process control of electroless deposition in microelectronics applications | ||
| Qingyun Chen, Branford, Conn. (US); Charles Valverde, Ansonia, Conn. (US); Vincent Paneccasio, Madison, Conn. (US); Nicolai Petrov, Hamden, Conn. (US); Daniel Stritch, West Haven, Conn. (US); Christian Witt, Woodbridge, Conn. (US); and Richard Hurtubise, Clinton, Conn. (US) | ||
| Assigned to Enthone Inc., West Haven, Conn. (US) | ||
| Filed on Oct. 05, 2005, as Appl. No. 11/243,876. | ||
| Application 11/243876 is a continuation in part of application No. 11/230912, filed on Sep. 20, 2005, granted, now 7,410,899. | ||
| Prior Publication US 2007/0066059 A1, Mar. 22, 2007 | ||
| Int. Cl. H01L 21/44 (2006.01) | ||
| U.S. Cl. 438—678 [438/761; 438/778; 438/782; 252/519.14; 252/520.4; 252/521.4; 257/635; 257/766] | 11 Claims |
| 7. A method for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices,
the method comprising:
contacting the substrate with an electroless deposition composition comprising (a) a source of deposition ions selected from
the group consisting of Co ions and Ni ions, (b) a reducing agent selected from the group consisting of a phosphorus-based
reducing agent, a borane-based reducing agent, and a combination thereof, and (c) an oxygen scavenger selected from the group
consisting of SO32−, HSO3−, or a combination thereof.
|