| US 7,615,483 B2 | ||
| Printed metal mask for UV, e-beam, ion-beam and X-ray patterning | ||
| Jurgen H. Daniel, San Francisco, Calif. (US); and Ana C. Arias, San Carlos, Calif. (US) | ||
| Assigned to Palo Alto Research Center Incorporated, Palo Alto, Calif. (US) | ||
| Filed on Dec. 22, 2006, as Appl. No. 11/644,250. | ||
| Prior Publication US 2008/0153242 A1, Jun. 26, 2008 | ||
| Int. Cl. H01L 21/4763 (2006.01) | ||
| U.S. Cl. 438—637 [977/775; 977/776] | 22 Claims |
| 1. A method of forming a via opening comprising:
forming a dielectric layer;
using a printer to deposit at least one individual droplet including suspended metal nanoparticles over a first portion of
the dielectric layer to form a mask pattern;
exposing the dielectric layer to radiation such that regions which are not masked by the mask pattern of metal nanoparticles
become chemically altered;
removing areas of the dielectric layer that have not been exposed to radiation to create a via in the dielectric.
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