| US 7,615,482 B2 | ||
| Structure and method for porous SiCOH dielectric layers and adhesion promoting or etch stop layers having increased interfacial and mechanical strength | ||
| Daniel C. Edelstein, White Plains, N.Y. (US); Alexandros Demos, Dublin, Calif. (US); Stephen M. Gates, Ossining, N.Y. (US); Alfred Grill, White Plains, N.Y. (US); Steven E. Molis, Patterson, N.Y. (US); Vu Ngoc Tran Nguyen, San Jose, Calif. (US); Steven Reiter, Santa Clara, Calif. (US); Darryl D. Restaino, Modena, N.Y. (US); and Kang Sub Yim, Santa Clara, Calif. (US) | ||
| Assigned to International Business Machines Corporation, Armonk, N.Y. (US); and Applied Materials, Inc., Santa Clara, Calif. (US) | ||
| Filed on Mar. 23, 2007, as Appl. No. 11/690,248. | ||
| Prior Publication US 2008/0233366 A1, Sep. 25, 2008 | ||
| Int. Cl. H01L 21/4763 (2006.01) | ||
| U.S. Cl. 438—627 [257/751; 257/E23.141; 257/E21.495; 257/E21.023; 257/E21.246; 257/E21.486; 257/701; 257/704; 257/707; 216/41; 216/42; 216/49; 438/736; 428/201] | 21 Claims |
| 1. A method for improving the interfacial strength between different layers, the method comprising the steps of:
a) providing a substrate having a layer of dielectric or conductive material;
b) introducing a flow of oxygen and SiCOH precursor into a chamber for a first time period so as to form a layer of oxide
on the layer of dielectric or conductive material, the oxide layer having essentially no carbon;
c) maintaining the flow of oxygen while gradually increasing the flow of the SiCOH precursor to a predetermined amount while
also introducing and gradually increasing the flow of a porogen precursor to a predetermined amount into the chamber for a
second time period so as to form a graded transition layer on the oxide layer, the graded transition layer having essentially
no carbon at the interface with the oxide layer and gradually increasing carbon towards a porous SiCOH layer; and
d) maintaining the flow of SiCOH precursor and porogen precursor at the predetermined amount in the chamber for a third time
period while abruptly reducing the flow of oxygen to a predetermined value so as to form a porous SiCOH layer on the graded
transition layer, the porous SiCOH layer having an homogenous composition throughout the layer.
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