US 7,615,466 B2
	Method for producing a semiconductor-on-insulator structure
Oleg Kononchuk, Grenoble (France)
Assigned to S.O.I.Tec Silicon on Insulator Technologies, Bernin (France)
Filed on Mar. 08, 2007, as Appl. No. 11/683,731.
Application 11/683731 is a continuation of application No. PCT/IB2006/003957, filed on Dec. 26, 2006.
Prior Publication US 2008/0153257 A1, Jun. 26, 2008
Int. Cl. H01L 21/30 (2006.01); H01L 21/46 (2006.01)

U.S. Cl. 438—458  [438/459; 438/311; 257/E21.568; 257/E21.331]

19 Claims

1. A process of treating a structure for use in electronics or optoelectronics applications, which comprises heat treating a structure comprising, successively, a substrate, a dielectric layer having a thermal conductivity substantially higher than that of an oxide layer made of an oxide of a semiconductor material, an oxide layer made of an oxide of a semiconductor material, and a semiconductor layer made of a semiconductor material and having a thickness of between around 250 angstroms and around 5000 angstroms, the heat treating conducted in an inert or reducing atmosphere at a temperature and a time sufficient to diffuse an amount of oxygen of the oxide layer through the semiconductor layer so that the thickness of the oxide layer decreases by a predetermined amount, wherein a part of the oxide layer is left after the heat treatment.