| US 7,615,464 B2 | ||
| Transfer method with a treatment of a surface to be bonded | ||
| Sébastien Kerdiles, Saint-Ismier (France); Christophe Maleville, La Terrasse (France); Fabrice Letertre, Grenoble (France); and Olivier Rayssac, Grenoble (France) | ||
| Assigned to S.O.I.Tec Silicon on Insulator Technologies, Bernin (France) | ||
| Filed on May 25, 2005, as Appl. No. 11/138,926. | ||
| Application 11/138926 is a continuation of application No. PCT/IB2004/003275, filed on Sep. 21, 2004. | ||
| Prior Publication US 2006/0270187 A1, Nov. 30, 2006 | ||
| Int. Cl. H01L 21/46 (2006.01) | ||
| U.S. Cl. 438—458 [438/455; 257/E21.122; 257/E21.567; 257/E21.568] | 18 Claims |
| 1. A method for minimizing or avoiding contamination of a final multilayer structure obtained by transfer of a thin layer
from a donor wafer, which comprises:
providing a donor wafer and a receiving handle wafer, each having a first surface prepared for bonding and a second surface,
with the donor wafer including a zone of weakness that defines a thin layer of donor wafer material to be transferred to the
receiving handle wafer;
treating at least one of the first surfaces to provide increased bonding energy when the first surfaces are bonded together;
bonding the first surfaces together to form an intermediate multilayer structure;
transferring the thin layer to the receiving handle wafer to form a final multilayer structure by detachment at the zone of
weakness and removal of remaining material of the donor wafer; and
avoiding or minimizing contamination of the final multilayer structure by treating only the first surface of the donor wafer
by exposure to a plasma prior to bonding and cleaning the contamination from the second surface of donor wafer after bonding
but prior to detachment of the thin layer, or by treating both first surfaces by exposure to a plasma followed by cleaning
contamination from the second surface of the receiving handle wafer after bonding but prior to detachment of the thin layer,
or by treating the first surface of the receiving handle wafer by exposure to a plasma followed by cleaning the second surface
of the receiving handle wafer after bonding but prior to detachment of the thin layer.
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