| US 7,615,420 B2 | ||
| Method for manufacturing indium gallium aluminium nitride thin film on silicon substrate | ||
| Fengyi Jiang, Nanchang (China); Li Wang, Jiang Xi (China); and Wenqing Fang, Jiang Xi (China) | ||
| Assigned to Lattice Power (Jiangxi) Corporation, (China) | ||
| Appl. No. 12/67,761 PCT Filed Sep. 26, 2006, PCT No. PCT/CN2006/002583 § 371(c)(1), (2), (4) Date Mar. 21, 2008, PCT Pub. No. WO2007/036163, PCT Pub. Date Apr. 05, 2007. |
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| Claims priority of application No. 2005 1 0030319 (CN), filed on Sep. 30, 2005. | ||
| Prior Publication US 2008/0248633 A1, Oct. 09, 2008 | ||
| Int. Cl. H01L 21/84 (2006.01); H01L 21/00 (2006.01); H01L 21/38 (2006.01); H01L 21/22 (2006.01) | ||
| U.S. Cl. 438—149 [438/551; 438/552; 438/553; 438/555; 438/671; 257/E21.121; 257/E21.125; 257/E21.127; 257/E21.131] | 19 Claims |
| 1. A method for fabricating InGaAlN thin film on a silicon substrate, the method comprising:
forming an Mg mask layer on the Si substrate;
forming a metal transition layer on said Mg mask layer; and
forming an InGaAlN semiconductor layer on said metal transition layer;
wherein said Mg mask layer only covers part of the surface of said Si substrate, and wherein the covered area is between 10%
and 90% of the total surface area.
|