| US 7,615,330 B2 | ||
| Positive resist composition and pattern formation method using the same | ||
| Sou Kamimura, Shizouka (Japan); Tomoya Sasaki, Shizuoka (Japan); Yasutomo Kawanishi, Shizuoka (Japan); and Kenji Wada, Shizuoka (Japan) | ||
| Assigned to FUJIFILM Corporation, Tokyo (Japan) | ||
| Filed on Mar. 26, 2007, as Appl. No. 11/727,267. | ||
| Claims priority of application No. 2006-086217 (JP), filed on Mar. 27, 2006; and application No. 2006-257965 (JP), filed on Sep. 22, 2006. | ||
| Prior Publication US 2007/0224540 A1, Sep. 27, 2007 | ||
| Int. Cl. G03F 7/004 (2006.01); G03F 7/30 (2006.01) | ||
| U.S. Cl. 430—270.1 [430/326; 430/921; 430/922] | 11 Claims |
| 1. A positive resist composition comprising:
a compound including a sulfonium cation having a structure represented by the following formula (Z-I);
a low molecular weight compound which increases solubility in an alkali developing solution by an action of an acid; and
a compound which generates a compound having a structure represented by the following formula (A-I) upon irradiation of an
actinic ray or a radiation:
![]() Q-A−(X)n—B—R (A-I)
wherein Q represents a sulfo group or a carboxyl group, A represents a divalent connecting group, X represents —SO2— or —CO—, n represents 0 or 1, B represents a single bond, an oxygen atom or —N(Rx)— in which Rx represents a hydrogen atom or a monovalent organic group, R represents a monovalent organic group including a proton acceptor
functional group or a monovalent organic group including an ammonium group, and when B represents —N(Rx)—, R and Rx may be combined with each other to form a ring.
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