| US 7,445,989 B2 | ||
| Semiconductor device and method of manufacturing the same | ||
| Taiji Ema, Kawasaki (Japan); and Toru Anezaki, Kawasaki (Japan) | ||
| Assigned to Fujitsu Limited, Kawasaki (Japan) | ||
| Filed on Jan. 28, 2005, as Appl. No. 11/44,458. | ||
| Claims priority of application No. 2004-316974 (JP), filed on Oct. 29, 2004. | ||
| Prior Publication US 2006/0094229 A1, May 04, 2006 | ||
| Int. Cl. H01L 21/253 (2006.01) | ||
| U.S. Cl. 438—253 [438/238; 438/241] | 14 Claims |
| 1. A method of manufacturing a semiconductor device, said method comprising the steps of:
forming a first insulating film over a first region of a semiconductor substrate;
forming a first conductor over said first insulating film;
forming a second insulating film over said first conductor;
removing said second insulating film over a contact region of said first conductor, while leaving said first conductor in
said contact region;
after removing said second insulating film over the contact region, forming a second conductive film over said second insulating
film;
removing said second conductive film over the contact region of said first conductor to make the second conductive film into
a second conductor;
forming a third insulating film covering said second conductor;
forming a first hole, which reaches said first conductor, in said third insulating film over the contact region; and
forming a first conductive plug, which is electrically connected with said contact region of said first conductor, in said
first hole.
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