| US 7,445,976 B2 | ||
| Method of forming a semiconductor device having an interlayer and structure therefor | ||
| James K. Schaeffer, Austin, Tex. (US); Rama I. Hegde, Austin, Tex. (US); and Srikanth B. Samavedam, Austin, Tex. (US) | ||
| Assigned to Freescale Semiconductor, Inc., Austin, Tex. (US) | ||
| Filed on May 26, 2006, as Appl. No. 11/420,525. | ||
| Prior Publication US 2007/0272975 A1, Nov. 29, 2007 | ||
| Int. Cl. H01L 21/00 (2006.01) | ||
| U.S. Cl. 438—197 [438/199; 438/151] | 22 Claims |
| 1. A method comprising:
providing a substrate; and
forming a first stack over the substrate, wherein the forming the first stack includes:
forming a dielectric layer over the substrate;
forming a first layer including a halogen and a metal over the dielectric layer; and
forming a metal layer over the first layer;
forming a second stack over the substrate, wherein the forming the second stack includes:
forming a second layer including a halogen and a metal over the substrate and the first layer; and
forming a second metal layer over the second layer; wherein the second layer is characterized as being of a different composition
than the first layer.
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