| US 7,614,032 B2 | ||
| Method for correcting a mask design layout | ||
| Andrew B. Kahng, Delmar, Calif. (US); Puneet Gupta, La Jolla, Calif. (US); Dennis Sylvester, Ann Arbor, Mich. (US); and Jie Yang, Ann Arbor, Mich. (US) | ||
| Assigned to The Regents of the Univerisity of California, Oakland, Calif. (US); and The Regents of the University of Michigan, Ann Arbor, Mich. (US) | ||
| Filed on Dec. 11, 2006, as Appl. No. 11/637,209. | ||
| Prior Publication US 2007/0168903 A1, Jul. 19, 2007 | ||
| This patent is subject to a terminal disclaimer. | ||
| Int. Cl. G06F 17/50 (2006.01) | ||
| U.S. Cl. 716—19 [716/21] | 13 Claims |
| 1. A method for performing a mask design layout to be printed, the method comprising:
determining a first level of correction for a mask design layout by using a computer system for a predetermined parametric
yield with a minimum total correction cost; and
correcting the mask design layout at said first level of correction based on a correction algorithm if said first level of
correction is determined to be required.
|