| US 7,613,025 B2 | ||
| Dram cell design with folded digitline architecture and angled active areas | ||
| Fei Wang, Boise, Id. (US); and Anton P. Eppich, Boise, Id. (US) | ||
| Assigned to Micron Technology, Inc., Boise, Id. (US) | ||
| Filed on Jan. 30, 2008, as Appl. No. 12/22,451. | ||
| Application 12/022451 is a continuation of application No. 11/376458, filed on Mar. 15, 2006, granted, now 7,349,232, filed on Mar. 25, 2008. | ||
| Prior Publication US 2008/0137392 A1, Jun. 12, 2008 | ||
| This patent is subject to a terminal disclaimer. | ||
| Int. Cl. G11C 5/06 (2006.01) | ||
| U.S. Cl. 365—63 [365/69; 365/149; 365/206] | 30 Claims |
| 1. A DRAM device comprised of a plurality of memory cells having an effective size of 6 F2, comprising:
a plurality of dual bit active areas, each of said active areas having a substantially longitudinal axis; and
a plurality of digitlines arranged in a folded digitline architecture, wherein said digitlines have a 3 F pitch and 2 F space
between adjacent digit lines, and wherein said active areas are positioned such that the longitudinal axis of said active
areas is oriented at an angle with respect to a centerline of said digitlines.
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