| US 7,612,400 B2 | ||
| MIM device and electronic apparatus | ||
| Teruo Kurahashi, Kawasaki (Japan); Hideharu Shido, Kawasaki (Japan); Kenji Ishikawa, Kawasaki (Japan); Takeo Nagata, Kawasaki (Japan); Yasuyoshi Mishima, Kawasaki (Japan); and Yukie Sakita, Kawasaki (Japan) | ||
| Assigned to Fujitsu Limited, Kawasaki (Japan) | ||
| Filed on Nov. 26, 2007, as Appl. No. 11/944,847. | ||
| Prior Publication US 2008/0121858 A1, May 29, 2008 | ||
| Int. Cl. H01L 27/108 (2006.01) | ||
| U.S. Cl. 257—306 [257/298; 257/312; 257/516; 257/532; 438/210; 438/239; 438/250; 438/253; 438/397] | 20 Claims |
| 1. An MIM device, comprising:
a lower electrode of a metal nitride film;
a hysteresis film of an oxide film containing Nb formed on said lower electrode; and
an upper electrode of a metal nitride film formed on said hysteresis film,
wherein said MIM device has a hysteresis characteristic in which:
a current flowing through said MIM device decreases a magnitude thereof along a first curve when a magnitude of a voltage
applied between said upper and lower electrodes is decreased from a first forming voltage of a negative polarity;
said magnitude of said current increases along a second curve when said magnitude of said voltage is increased subsequently
to a second forming voltage of positive polarity in a positive polarity direction beyond 0V;
said magnitude of said current decreases along a third curve when said magnitude of said voltage is decreased from said second
forming voltage to 0V, said third curve providing a larger current magnitude than said second curve; and
said magnitude of said current increases along a fourth curve when said magnitude of said voltage is increased subsequently
to said first forming voltage beyond 0V, said fourth curve providing a smaller current magnitude than said first curve.
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