| US 7,612,398 B2 | ||
| Semiconductor storage device and method of manufacturing the same | ||
| Yoshinori Kumura, Yokohama (Japan); Yoshiro Shimojo, Yokohama (Japan); Iwao Kunishima, Yokohama (Japan); and Tohru Ozaki, Tokyo (Japan) | ||
| Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan) | ||
| Filed on Sep. 01, 2004, as Appl. No. 10/931,193. | ||
| Claims priority of application No. 2004-196843 (JP), filed on Jul. 02, 2004. | ||
| Prior Publication US 2006/0002170 A1, Jan. 05, 2006 | ||
| Int. Cl. H01L 21/02 (2006.01) | ||
| U.S. Cl. 257—298 [257/E27.104; 365/145] | 6 Claims |
| 1. A semiconductor storage device comprising:
at least one field effect transistor formed on one surface side of a semiconductor substrate;
a first hydrogen barrier film formed above the field effect transistor;
a capacitor array comprising a plurality of ferroelectric capacitors formed close to each other above the first hydrogen barrier
film;
a single insulating film configured to cover the entire top portion of the capacitor array, to planarize a space between adjacent
ferroelectric capacitors by continuously disposing the single insulating film inside the capacitor array, and to contact with
the first hydrogen barrier film between the adjacent ferroelectric capacitors;
a second hydrogen barrier film formed on the insulating film and being brought into contact with the first hydrogen barrier
film outside of the capacitor array; and
a transistor-capacitor parallel unit in which said at least one field effect transistor and one ferroelectric capacitor are
connected in parallel.
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