| US 7,612,361 B2 | ||
| Method of growing a nitride single crystal on silicon wafer, nitride semiconductor light emitting diode manufactured using the same and the manufacturing method | ||
| Hee Seok Park, Gyunggi-do (Korea, Republic of); Zhilyaev Yuri Vasilievich, St.-Petersburg (Russian Federation); and Bessolov Vasiliy Nikolaevich, St.-Petersburg (Russian Federation) | ||
| Assigned to Samsung Electro-Mechanics Co., Ltd., Gyunggi-Do (Korea, Republic of); and Ioffe Physico-Technical Institute RAS, Saint Petersburg (Russian Federation) | ||
| Filed on Jul. 19, 2007, as Appl. No. 11/826,874. | ||
| Claims priority of application No. 2006127075 (RU), filed on Jul. 25, 2006. | ||
| Prior Publication US 2008/0023710 A1, Jan. 31, 2008 | ||
| Int. Cl. H01L 33/00 (2006.01); H01L 21/20 (2006.01) | ||
| U.S. Cl. 257—13 [257/94; 257/190; 257/E33.023; 438/47] | 20 Claims |
| 1. A method for growing a nitride single crystal comprising steps of:
preparing a silicon substrate having a surface in (111) crystal orientation;
forming a first nitride buffer layer on the surface of the silicon substrate;
forming an amorphous oxide film on the first nitride buffer layer;
forming a second nitride buffer layer on the amorphous oxide film; and
forming the nitride single crystal on the second nitride buffer layer,
wherein the amorphous oxide film is an Al2O3 amorphous film and the first buffer layer comprises AlN.
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