| US 7,611,991 B2 | ||
| Technique for increasing adhesion of metallization layers by providing dummy vias | ||
| Ralf Richter, Dresden (Germany); Matthias Schaller, Dresden (Germany); Ellen Claus, Dresden (Germany); and Eckhard Langer, Radebeul (Germany) | ||
| Assigned to Advanced Micro Devices, Inc., Austin, Tex. (US) | ||
| Filed on Sep. 05, 2006, as Appl. No. 11/470,024. | ||
| Claims priority of application No. 10 2005 057 076 (DE), filed on Nov. 30, 2005. | ||
| Prior Publication US 2007/0123009 A1, May 31, 2007 | ||
| Int. Cl. H01L 21/44 (2006.01) | ||
| U.S. Cl. 438—687 [257/E21.579] | 8 Claims |
| 1. A method, comprising:
identifying a region of reduced via density in a metallization layer of a semiconductor device by determining an area in said
metallization layer for receiving a metal region therein on the basis of design rules for said semiconductor device, determining
a number of functional vias located below said metal region and connected thereto and obtaining a measure for a density of
said functional vias on the basis of design values relating to said metal region and said functional vias, wherein the region
is identified based on said measure;
forming a dummy via in said identified region beneath said metal region; and
forming the metal region above said identified region, said metal region connecting to said dummy via.
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