| US 7,611,975 B2 | ||
| Method of implanting a substrate and an ion implanter for performing the method | ||
| Adrian Murrell, West Sussex (United Kingdom); Peter Michael Banks, West Sussex (United Kingdom); Matthew Peter Dobson, East Sussex (United Kingdom); Peter Kindersley, West Sussex (United Kingdom); Takao Sakase, Rowley, Mass. (US); Marvin Farley, Ipswich, Mass. (US); Shu Satoh, Byfield, Mass. (US); and Geoffrey Ryding, Manchester, Mass. (US) | ||
| Assigned to Applied Materials, Inc., Santa Clara, Calif. (US) | ||
| Filed on Sep. 27, 2006, as Appl. No. 11/527,594. | ||
| Application 11/417028 is a division of application No. 10/754502, filed on Jan. 12, 2004, granted, now 7,049,210. | ||
| Application 11/527594 is a continuation in part of application No. 11/417028, filed on May 04, 2006, granted, now 7,282,427. | ||
| Application 10/754502 is a continuation in part of application No. 10/251780, filed on Sep. 23, 2002, granted, now 6,908,836. | ||
| Prior Publication US 2007/0105355 A1, May 10, 2007 | ||
| Int. Cl. H01L 21/12 (2006.01); H01L 21/20 (2006.01); H01J 37/304 (2006.01); H01J 37/317 (2006.01) | ||
| U.S. Cl. 438—506 [438/373; 438/407; 438/440; 438/527; 438/961; 257/E21.001; 257/E21.092; 257/E21.214; 250/492.2; 250/492.21; 250/497.1] | 9 Claims |
| 1. A method of implanting a substrate wafer having an implant surface with a predetermined diameter, the method comprising:
a) generating an implant beam having a predetermined beam direction,
b) holding said substrate wafer aligned in an implant plane, normal to said beam direction,
c) said beam having orthogonal cross-sectional dimensions in said implant plane each of which is less than said predetermined
wafer diameter, and
d) mechanically scanning said substrate wafer in two dimensions in said implant plane to provide a desired uniform total implant
dose over the implant surface of the substrate wafer, said mechanically scanning comprising a first mechanically driven reciprocating
movement of the wafer along a first translational direction, and a second mechanically driven reciprocating movement of the
wafer along a second translational direction different from said first translational direction,
wherein said mechanical scanning is performed so as to deliver said total implant dose in first and second parts,
said first part being delivered by performing said mechanical scanning with said substrate wafer held in a first constant
orientation about a twist axis parallel to said predetermined beam direction, and
said second part being delivered to complete said total implant dose by performing said mechanical scanning with the substrate
wafer held in a second constant orientation at 180° to said first orientation about said twist axis.
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