| US 7,611,974 B2 | ||
| Multilayer structure and fabrication thereof | ||
| Fabrice Letertre, Meylan (France) | ||
| Assigned to S.O.I. Tec Silicon on Insulator Technologies, Bernin (France) | ||
| Filed on Sep. 05, 2007, as Appl. No. 11/899,340. | ||
| Claims priority of application No. 0753260 (FR), filed on Feb. 14, 2007. | ||
| Prior Publication US 2008/0191239 A1, Aug. 14, 2008 | ||
| Int. Cl. H01L 21/20 (2006.01); H01L 21/36 (2006.01) | ||
| U.S. Cl. 438—479 [438/763; 438/933; 257/183; 257/347; 257/615; 257/616; 257/E21.32; 257/E21.545; 257/189] | 13 Claims |
| 1. A process for fabricating a multilayer structure comprising:
a) growing a growth layer on a silicon substrate that is adapted and configured to permit growth of III-V materials thereon;
b) forming at least one pattern from the growth layer;
c) depositing an oxide layer on the silicon substrate;
d) transferring a silicon active layer onto the oxide layer;
e) forming a cavity through the silicon active layer and in the oxide layer above the at least one pattern to expose the growth
layer; and
f) growing a III-V material in the cavity on the growth layer.
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