| US 7,611,937 B2 | ||
| High performance transistors with hybrid crystal orientations | ||
| Chung-Te Lin, Tainan (Taiwan); I-Lu Wu, Hsin-Chu (Taiwan); and Mariam Sadaka, Austin, Tex. (US) | ||
| Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (Taiwan) | ||
| Filed on Nov. 17, 2005, as Appl. No. 11/281,029. | ||
| Claims priority of provisional application 60/693879, filed on Jun. 24, 2005. | ||
| Prior Publication US 2006/0292834 A1, Dec. 28, 2006 | ||
| Int. Cl. H01L 21/336 (2006.01); H01L 21/8234 (2006.01) | ||
| U.S. Cl. 438—198 [438/150; 438/154; 438/221; 438/222; 438/404; 257/E21.562] | 14 Claims |
| 1. A method of forming a semiconductor structure comprising:
providing a substrate comprising a buried oxide (BOX) on a first semiconductor layer, and a second semiconductor layer on
the buried oxide, wherein the first and second semiconductor layers have a first and a second crystal orientation, respectively,
and wherein the substrate comprises a first region and a second region;
forming a first isolation structure in the second region, wherein the first isolation structure extends through the second
semiconductor layer and the BOX to the first semiconductor layer;
forming a hard mask in the first and second regions, wherein the hard mask is over the first isolation structure;
forming and patterning a photo resist on the hard mask;
forming a first trench by etching the hard mask and the first isolation structure, until the first semiconductor layer is
exposed through the first trench; and
epitaxially growing a semiconductor material in the first trench.
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