| US 7,611,930 B2 | ||
| Method of manufacturing display device | ||
| Shunpei Yamazaki, Tokyo (Japan); Sachiaki Teduka, Kanagawa (Japan); Makoto Furuno, Kanagawa (Japan); Satoshi Toriumi, Kanagawa (Japan); Yasuhiro Jinbo, Kanagawa (Japan); and Koji Dairiki, Kanagawa (Japan) | ||
| Assigned to Semiconductor Energy Laboratory Co., Ltd., Kanagawa-Ken (Japan) | ||
| Filed on Aug. 05, 2008, as Appl. No. 12/186,001. | ||
| Prior Publication US 2009/0047758 A1, Feb. 19, 2009 | ||
| Int. Cl. H01L 21/84 (2006.01) | ||
| U.S. Cl. 438—151 [438/479; 257/E21.561] | 22 Claims |
| 1. A method of manufacturing a display device, comprising:
forming a gate electrode over a substrate;
forming a gate insulating film over the gate electrode;
forming a microcrystalline semiconductor film over the gate insulating film by a plasma CVD method; and
forming an amorphous semiconductor film over the microcrystalline semiconductor film,
wherein the step of forming the microcrystalline semiconductor film comprises:
a pressure of a reaction chamber being set at or below 10−5 Pa;
a temperature of the substrate being set in a range of 100° C. to 200° C.;
plasma being produced by introducing hydrogen and a rare gas; and
hydrogen plasma being made to act on a reaction product formed on a surface of the gate insulating film to etch the reaction
product while forming the microcrystalline semiconductor film.
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