| US 7,611,808 B2 | ||
| Halftone type phase shift mask blank and halftone type phase shift mask | ||
| Masao Ushida, Yamanashi (Japan); Minoru Sakamoto, Yamanashi (Japan); and Naoki Nishida, Tokyo (Japan) | ||
| Assigned to Hoya Corporation, Tokyo (Japan) | ||
| Filed on Dec. 21, 2006, as Appl. No. 11/642,595. | ||
| Application 11/642595 is a division of application No. 10/375063, filed on Feb. 28, 2003, granted, now 7,166,392. | ||
| Claims priority of application No. P. 2002-056133 (JP), filed on Mar. 01, 2002; application No. P. 2002-310149 (JP), filed on Oct. 24, 2002; application No. U. 2002-006747 (JP), filed on Oct. 24, 2002; and application No. P. 2003-036825 (JP), filed on Feb. 14, 2003. | ||
| Prior Publication US 2007/0134568 A1, Jun. 14, 2007 | ||
| This patent is subject to a terminal disclaimer. | ||
| Int. Cl. G03F 1/00 (2006.01) | ||
| U.S. Cl. 430—5 | 16 Claims |
| 1. A halftone type phase shift mask comprising:
a transparent substrate;
a semitranslucent film pattern formed on the transparent substrate and having a predetermined transmittance and a phase shift
amount for an exposed light; and
a shielding film pattern formed on the semitranslucent film pattern,
wherein reflectances of the transparent substrate, the semitranslucent film pattern and the shielding film pattern for an
inspecting light, which is used for inspecting the halftone type phase shift mask, are different from each other by 3% or
more.
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