| US 7,611,646 B2 | ||
| Oxide sintered body and an oxide film obtained by using it, and a transparent base material containing it | ||
| Tokuyuki Nakayama, Ichikawa (Japan); and Yoshiyuki Abe, Ichikawa (Japan) | ||
| Assigned to Sumitomo Metal Mining Co., Ltd., Tokyo (Japan) | ||
| Filed on Nov. 27, 2006, as Appl. No. 11/604,259. | ||
| Claims priority of application No. 2006-031201 (JP), filed on Feb. 08, 2006. | ||
| Prior Publication US 2007/0184286 A1, Aug. 09, 2007 | ||
| Int. Cl. H01B 1/08 (2006.01); C04B 35/01 (2006.01) | ||
| U.S. Cl. 252—518.1 [252/519.1; 501/126; 423/624] | 3 Claims |
| 1. An oxide sintered body consisting essentially of gallium, indium, and oxygen, such that:
a content of the gallium is more than 65 at. % and less than 100 at. % with respect to all metallic elements;
the oxide sintered body having one or more phases selected from a gallium oxide phase having β-Ga2O3 type structure (β-Ga2O3 phase), a gallium indium oxide phase having β-Ga2O3 type structure (β-GaInO3 phase), or (Ga, In)2O3 phase;
the oxide sintered body having an indium oxide phase (In2O3 phase) of bixbyite-type structure; and
a density of the sintered body is 5.0 g/cm3 or more,
wherein a film can be formed by a direct current sputtering method when the oxide sintered body is used as a sputtering target,
and
wherein a ratio in which the indium oxide phase (In2O3 phase) of the bixbyite-type structure contained is 5% or less in terms of an X-ray diffraction peak intensity ratio defined
by the following formula (1):
In2O3 phase (400)/{β-Ga2O3 phase (−202)+β-GaInO3 phase (111)+(Ga,In)2O3 phase (2θ≈33°)}×100 [%] (1).
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