| US 7,608,917 B2 | ||
| Power semiconductor module | ||
| Ryoichi Kajiwara, Hitachi (Japan); Kazuhiro Suzuki, Mito (Japan); Toshiaki Ishii, Hitachi (Japan); and Kazutoshi Itou, Hitachi (Japan) | ||
| Assigned to Hitachi, Ltd., Tokyo (Japan) | ||
| Filed on May 16, 2007, as Appl. No. 11/749,211. | ||
| Claims priority of application No. 2006-137219 (JP), filed on May 17, 2006. | ||
| Prior Publication US 2007/0267739 A1, Nov. 22, 2007 | ||
| Int. Cl. H01L 23/02 (2006.01); H01L 23/10 (2006.01) | ||
| U.S. Cl. 257—678 [257/703; 257/705; 257/706; 257/707; 257/712; 257/713; 257/E23.09; 257/E23.038; 257/E23.101] | 15 Claims |
| 1. A power semiconductor module comprising:
a power semiconductor device having a main electrode and a control electrode formed on a circuit face and a rear electrode
formed on a face opposite to the circuit face;
a ceramic substrate with printed circuit having metal electrodes formed on both faces of the ceramic substrate, the metal
electrode being joined to the rear electrode of the power semiconductor device;
a lead having metal electrodes formed on both faces of a ceramic substrate, the metal electrode being joined to the main electrode
and the control electrode of the power semiconductor device; and
a mold resin having a coefficient of thermal expansion of 10 ppm/K or less for sealing the ceramic substrate with printed
circuit, the power semiconductor device and the lead so as to expose metal electrodes on a side of the ceramic substrate with
printed circuit that is not joined to the power semiconductor device and metal electrodes on a side of the lead that is not
joined to the power semiconductor device to outside.
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