| US 7,608,849 B2 | ||
| Non-volatile switching element, method for manufacturing the same, and integrated circuit having non-volatile switching elements | ||
| Tsunehiro Ino, Fujisawa (Japan); and Masato Koyama, Miura-gun (Japan) | ||
| Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan) | ||
| Filed on Oct. 31, 2006, as Appl. No. 11/554,808. | ||
| Claims priority of application No. 2005-379267 (JP), filed on Dec. 28, 2005. | ||
| Prior Publication US 2007/0145345 A1, Jun. 28, 2007 | ||
| Int. Cl. H01L 29/02 (2006.01); H01L 47/00 (2006.01) | ||
| U.S. Cl. 257—4 [257/2; 257/467; 257/930; 257/E23.082; 136/203; 136/204] | 24 Claims |
| 1. A non-volatile switching element comprising:
a switching film formed on a substrate, made of a material causing a 10 times or greater change in electric resistance with
a temperature change within a range of ±80 K from a predetermined temperature;
a Peltier element causing the switching film to have the temperature change;
a heat conducting and electric insulating film provided between the switching film and the Peltier element, to conduct heat
from the Peltier element; and
a pair of electrodes connected to the switching film.
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