| US 7,608,848 B2 | ||
| Bridge resistance random access memory device with a singular contact structure | ||
| ChiaHua Ho, Kaohsiung (Taiwan); Erh-Kun Lai, Taichung County (Taiwan); and Kuang Yeu Hsieh, Hsinchu (Taiwan) | ||
| Assigned to Macronix International Co., Ltd., Hsinchu (Taiwan) | ||
| Filed on May 09, 2006, as Appl. No. 11/382,422. | ||
| Prior Publication US 2007/0262388 A1, Nov. 15, 2007 | ||
| Int. Cl. H01L 29/04 (2006.01) | ||
| U.S. Cl. 257—3 [257/E29.17] | 18 Claims |
| 1. A memory device, comprising:
a first electrode, electrically connected to an access device, including an annular portion with an interior area, the first
electrode having an edge surface on the annular portion;
a second electrode, electrically connected to a bit line, spaced apart from the first electrode and situated within the interior
area, the second electrode having an edge surface;
an insulating material separating the first and second electrodes; and
a memory material in contact with the edge surface of the first electrode and the edge surface of the second electrode.
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