| US 7,608,549 B2 | ||
| Method of forming non-conformal layers | ||
| Sebastian E. Van Nooten, Bilthoven (Netherlands); Jan Willem Maes, Wilrijk (Belgium); Steven Marcus, Tempe, Ariz. (US); Glen Wilk, Scottsdale, Ariz. (US); Petri Räisänen, Gilbert, Ariz. (US); and Kai-Erik Elers, Phoenix, Ariz. (US) | ||
| Assigned to ASM America, Inc., Phoenix, Ariz. (US) | ||
| Filed on Mar. 13, 2006, as Appl. No. 11/375,588. | ||
| Claims priority of provisional application 60/662312, filed on Mar. 15, 2005. | ||
| Prior Publication US 2007/0026540 A1, Feb. 01, 2007 | ||
| Int. Cl. H01L 21/31 (2006.01); H01L 21/469 (2006.01) | ||
| U.S. Cl. 438—758 [257/E21.019] | 26 Claims |
| 1. A method for depositing a film on a semiconductor substrate, the method comprising:
providing a substrate with a surface comprising regions with different levels of accessibility;
providing a sequence of at least two different reactants in temporally separated and alternating reactant pulses, wherein
at least one of the at least two different reactants is provided through a showerhead or otherwise provided in that it impinges
vertically on the substrate;
selecting plasma-enhanced atomic layer deposition (PEALD) conditions to achieve self-satuaration and self-limiting atomic
layer deposition (ALD) mode deposition on the most accessible regions on the substrate surface and depletion effects in less
accessible regions on the substrate surface; and
exposing the semiconductor substrate to the sequence of the reactant pulses with the selected temporal separations and durations
to deposit the film.
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