| US 7,608,537 B2 | ||
| Method for fabricating semiconductor device | ||
| Mie Matsuo, Kanagawa (Japan); and Hisashi Kaneko, Kanagawa (Japan) | ||
| Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan) | ||
| Filed on Sep. 25, 2007, as Appl. No. 11/861,087. | ||
| Claims priority of application No. 2006-264186 (JP), filed on Sep. 28, 2006. | ||
| Prior Publication US 2008/0081466 A1, Apr. 03, 2008 | ||
| Int. Cl. G03F 7/00 (2006.01); H01J 49/42 (2006.01) | ||
| U.S. Cl. 438—672 [438/669; 257/E21.245] | 20 Claims |
| 1. A method for fabricating a semiconductor device, comprising:
forming a plurality of openings in a first film;
embedding a metallic material serving as both a plug material and an alignment mark material for alignment with an upper layer
in the plurality of openings;
forming a second film on the first film in which the metallic material is embedded;
irradiating the second film formed in a predetermined region including a position where the metallic material is embedded
as the alignment mark material with a processing light, thereby to remove the second film to an extent that a portion of the
second film remains in the predetermined region; and
etching, by wet etching method, the portion of the second film remaining in the predetermined region and not having been removed
by controlling that the portion of the second film remains in the predetermined region in the irradiating.
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