| US 7,608,522 B2 | ||
| Method for fabricating a hybrid orientation substrate | ||
| Chien-Ting Lin, Hsin-Chu (Taiwan); Che-Hua Hsu, Hsin-Chu Hsien (Taiwan); Yao-Tsung Huang, Kaoshiung County (Taiwan); and Guang-Hwa Ma, Hsinchu (Taiwan) | ||
| Assigned to United Microelectronics Corp., Hsin-Chu (Taiwan) | ||
| Filed on Mar. 11, 2007, as Appl. No. 11/684,634. | ||
| Prior Publication US 2008/0220595 A1, Sep. 11, 2008 | ||
| Int. Cl. H01L 21/30 (2006.01) | ||
| U.S. Cl. 438—455 [438/198; 438/275; 438/486] | 10 Claims |
| 1. A method for fabricating a hybrid orientation substrate comprising steps of:
providing a direct silicon bonding (DSB) wafer having a first substrate with a first crystalline orientation and a second
substrate with a second crystalline orientation directly bonded thereon;
forming and patterning a first blocking layer on the second substrate to define a first region not covered by the first blocking
layer and a second region covered by the first blocking layer;
performing an amorphization process to transform the first region of the second substrate into an amorphized region; and
performing an annealing process to recrystallize the amorphized region into the orientation of the first substrate and simultaneously
to make the second region stressed by the first blocking layer.
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