	US 7,608,368 B2
	Pattern forming method, photomask manufacturing method, semiconductor device manufacturing method, and computer program product
Hideaki Sakurai, Yokohama (Japan); Tooru Shibata, Kawasaki (Japan); Masato Saito, Machida (Japan); and Masamitsu Itoh, Yokohama (Japan)
Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan)
Filed on Jan. 31, 2006, as Appl. No. 11/342,677.
Claims priority of application No. 2005-024142 (JP), filed on Jan. 31, 2005.
Prior Publication US 2006/0172205 A1, Aug. 03, 2006
Int. Cl. G03F 9/00 (2006.01); G03C 5/00 (2006.01)

U.S. Cl. 430—5 [430/30; 430/296; 430/313; 430/323; 430/330; 430/331; 430/942]

16 Claims

8. A photomask manufacturing method comprising:

preparing a substrate including a light shield film on which a resist film is formed, the light shield film being formed on a main surface of the substrate;

exposing the resist film to form a latent image of a pattern on the resist film;

developing the resist film by flowing a developing solution on the resist film to form a resist pattern, the developing the resist film comprising partitioning the main surface of the substrate into M (≧2) regions and determining a correction exposure dose for each of the M regions, the determining the correction exposure dose including determining a correction exposure dose for an i-th (1≤i≤M) region so that an actual pattern dimension of a pattern on the i-th region matches a design pattern dimension based on a pattern opening ratio of a pattern located on an upstream region which is further upstream than the i-th region along a flow direction of the developing solution; and light shield film using the resist pattern as a mask.