| US 7,602,643 B2 | ||
| Non-volatile memory devices capable of reading data during multi-sector erase operation, and data read methods thereof | ||
| Ji-ho Cho, Suwon-si (Korea, Republic of) | ||
| Assigned to Samsung Electronics Co., Ltd., (Korea, Republic of) | ||
| Filed on Dec. 11, 2006, as Appl. No. 11/608,976. | ||
| Claims priority of application No. 10-2006-0108379 (KR), filed on Nov. 03, 2006. | ||
| Prior Publication US 2008/0123422 A1, May 29, 2008 | ||
| Int. Cl. G11C 16/04 (2006.01) | ||
| U.S. Cl. 365—185.11 [365/185.18; 365/185.29] | 7 Claims |
| 1. A data read method performed by a non-volatile memory device including a plurality of sectors, each of the sectors including
at least one non-volatile memory cell, the method comprising:
sequentially erasing data of a plurality of sectors, which are to be erased; and
if a read command instructing reading of a sector that is to be read is received while the plurality of sectors, which are
to be erased, are being erased, reading data of the sector that is to be read while the plurality of sectors, which are to
be erased, are being erased,
wherein, during the reading of the data of the sector that is to be read, if the sector that is to be read belongs to a bank
including an erased sector from which data is already erased, the data of the sector that is to be read is read while the
plurality of sectors, which are to be erased, are being erased.
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