| US 7,602,636 B2 | ||
| Spin MOSFET | ||
| Yoshiaki Saito, Kawasaki (Japan); Hideyuki Sugiyama, Yokohama (Japan); and Tomoaki Inokuchi, Kawasaki (Japan) | ||
| Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan) | ||
| Filed on Jun. 29, 2007, as Appl. No. 11/771,295. | ||
| Claims priority of application No. 2006-244656 (JP), filed on Sep. 08, 2006. | ||
| Prior Publication US 2008/0061332 A1, Mar. 13, 2008 | ||
| Int. Cl. G11C 11/00 (2006.01) | ||
| U.S. Cl. 365—158 [365/171; 365/173; 257/295] | 58 Claims |
| 1. A spin MOSFET comprising:
a semiconductor substrate;
a first magnetic film formed on the semiconductor substrate and including a first ferromagnetic layer, a magnetization direction
of the first ferromagnetic layer being invariable;
a second magnetic film formed on the semiconductor substrate to separate from the first magnetic film and including a magnetization
free layer, a first nonmagnetic layer being a tunnel insulator and provided on the magnetization free layer, and a magnetization
fixed layer provided on the first nonmagnetic layer, a magnetization direction of the magnetization free layer being variable
and a magnetization direction of the magnetization fixed layer being invariable;
a gate insulating film provided at least on the semiconductor substrate between the first magnetic film and the second magnetic
film; and
a gate electrode formed on the gate insulating film,
the semiconductor substrate between the first and second magnetic films being a current path for each of a reading current
and a writing current.
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