| US 7,602,456 B2 | ||
| Method of manufacturing LCD apparatus by using halftone exposure method | ||
| Sakae Tanaka, Mito (Japan); and Toshiyuki Samejima, Kodaira (Japan) | ||
| Assigned to Mikuni Electoron Co. Ltd, (Japan) | ||
| Filed on May 16, 2007, as Appl. No. 11/749,190. | ||
| Claims priority of application No. 2006-166674 (JP), filed on May 19, 2006. | ||
| Prior Publication US 2007/0269936 A1, Nov. 22, 2007 | ||
| Int. Cl. G02F 1/136 (2006.01) | ||
| U.S. Cl. 349—43 [349/42] | 111 Claims |
| 1. A method of manufacturing a TN mode, a MVA mode or an IPS active matrix substrate of active matrix display apparatus, characterized
in that the method uses a photolithographic process for four times for the manufacture and comprises the steps of:
(1) using a halftone mask for a first halftone exposure to form a gate electrode, a pixel electrode, a common electrode and
a contact pad in the pixel electrode;
(2) using a halftone mask for a second halftone exposure to form a thin film semiconductor layer component separation and
a contact hole;
(3) using a general mask to form a source electrode, a drain electrode and a holdup capacitor forming electrode; and
(4) using the general mask to form contact holes of a gate electrode terminal, a source electrode terminal and a common electrode
terminal.
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