US 7,602,046 B2
	Recycling by mechanical means of a wafer comprising a multilayer structure after taking-off a thin layer thereof
Bruno Ghyselen, Seyssinet-Pariset (France); Cécile Aulnette, Grenoble (France); Bénédite Osternaud, Saint Laurent du Pont (France); Takeshi Akatsu, Saint Nazaire les Eymes (France); and Bruce Faure, Grenbole (France)
Assigned to S.O.I.Tec Silicon on Insulator Technologies, Bernin (France)
Filed on Mar. 07, 2005, as Appl. No. 11/75,323.
Application 11/075323 is a continuation of application No. PCT/IB2004/000285, filed on Jan. 07, 2004.
Claims priority of provisional application 60/472470, filed on May 22, 2003.
Claims priority of application No. 03 00098 (FR), filed on Jan. 07, 2003.
Prior Publication US 2005/0150447 A1, Jul. 14, 2005
Int. Cl. H01L 29/26 (2006.01)

U.S. Cl. 257—618  [257/98; 257/432; 257/E21.122; 257/E21.568; 438/455]

22 Claims

1. A recyclable donor wafer that includes a donor substrate and a formed layer thereon, wherein the formed layer has a thickness to provide (a) at least two useful layers for detachment therefrom and (b) additional material for removal to planarize exposed surfaces of the useful layers to sequentially prepare each layer for molecular bonding to a separate receiving substrate prior to detachment of the layer from the donor substrate, wherein the thickness of the formed layer allows the formed layer to be molecularly bonded to a first receiving substrate to allow the selective removal and transfer of a first useful layer thereto, while a second a second useful layer remains intact, and to allow the remaining portion of the formed layer to be subsequently bonded to a second receiving substrate to allow the selective removal and transfer of the second useful layer thereto without reforming the remaining portion of the formed layer.