| US 7,601,996 B2 | ||
| Semiconductor device and manufacturing method thereof | ||
| Hiroyuki Ohta, Kawasaki (Japan); and Kenichi Okabe, Kawasaki (Japan) | ||
| Assigned to Fujitsu Microelectronics Limited, Tokyo (Japan) | ||
| Filed on May 23, 2006, as Appl. No. 11/438,684. | ||
| Claims priority of application No. 2006-007742 (JP), filed on Jan. 16, 2006. | ||
| Prior Publication US 2007/0164375 A1, Jul. 19, 2007 | ||
| Int. Cl. H01L 29/76 (2006.01) | ||
| U.S. Cl. 257—213 [257/E51.005; 257/E29.13] | 5 Claims |
| 1. A semiconductor device including a field-effect transistor arranged in a semiconductor substrate, the transistor comprising:
a gate electrode;
a source/drain extension region in the semiconductor substrate;
a source/drain impurity diffusion region in the semiconductor substrate deeper than the source/drain extension region;
a carbon layer surrounding the source/drain impurity diffusion region; and
a pocket region located below the source/drain extension region,
wherein the carbon layer is offset from front edges of the source/drain extension region and the pocket region in the direction
away from the gate electrode.
|