| US 7,601,986 B2 | ||
| Epitaxial semiconductor structures having reduced stacking fault nucleation sites | ||
| Christer Hallin, Linkoping (Sweden); and Heinz Lendenmann, Stocksund (Sweden) | ||
| Assigned to Cree, Inc., Durham, N.C. (US) | ||
| Filed on Dec. 22, 2006, as Appl. No. 11/615,600. | ||
| Application 11/615600 is a division of application No. 10/929226, filed on Aug. 30, 2004, granted, now 7,173,285. | ||
| Claims priority of provisional application 60/554123, filed on Mar. 18, 2004. | ||
| Prior Publication US 2007/0105349 A1, May 10, 2007 | ||
| Int. Cl. H01L 31/0312 (2006.01) | ||
| U.S. Cl. 257—77 [257/76; 257/E23.118; 257/E33.005; 257/E21.054; 438/105] | 13 Claims |
| 1. A silicon carbide semiconductor structure comprising:
a silicon carbide substrate having an off-axis orientation toward a crystallographic direction and including a plurality of
features in a surface thereof, the plurality of features including at least one sidewall that is oriented nonparallel to the
crystallographic direction; and
an epitaxial silicon carbide layer on the surface of the silicon carbide substrate that includes the plurality of features
therein, the epitaxial silicon carbide layer being thicker than a depth of the at least one sidewall.
|