US 7,601,984 B2
	Field effect transistor with amorphous oxide active layer containing microcrystals and gate electrode opposed to active layer through gate insulator
Masafumi Sano, Fujisawa (Japan); Katsumi Nakagawa, Zama (Japan); Hideo Hosono, Yokohama (Japan); Toshio Kamiya, Yokohama (Japan); and Kenji Nomura, Yokohama (Japan)
Assigned to Canon Kabushiki Kaisha, Tokyo (Japan); and Tokyo Institute of Technology, Tokyo (Japan)
Filed on Nov. 09, 2005, as Appl. No. 11/269,600.
Claims priority of application No. 2004-326687 (JP), filed on Nov. 10, 2004.
Prior Publication US 2006/0108636 A1, May 25, 2006
Int. Cl. H01L 29/04 (2006.01)

U.S. Cl. 257—57  [257/52; 257/65; 257/E31.034; 438/149; 438/166]

6 Claims

1. A field effect transistor comprising an active layer of an amorphous oxide containing a microcrystal, wherein a grain boundary interface of the microcrystal is surrounded by the amorphous oxide and a gate electrode formed so as to face the active layer through a gate insulator.