| US 7,601,651 B2 | ||
| Method to improve the step coverage and pattern loading for dielectric films | ||
| Mihaela Balseanu, Sunnyvale, Calif. (US); Meiyee Shek, Mountain View, Calif. (US); Li-Qun Xia, Santa Clara, Calif. (US); and Hichem M'Saad, Santa Clara, Calif. (US) | ||
| Assigned to Applied Materials, Inc., Santa Clara, Calif. (US) | ||
| Filed on Jan. 30, 2007, as Appl. No. 11/668,911. | ||
| Claims priority of provisional application 60/790254, filed on Apr. 07, 2006. | ||
| Claims priority of provisional application 60/788279, filed on Mar. 31, 2006. | ||
| Prior Publication US 2007/0232082 A1, Oct. 04, 2007 | ||
| Int. Cl. H01L 21/31 (2006.01) | ||
| U.S. Cl. 438—789 [438/790; 257/E21.24; 257/E21.567] | 17 Claims |
| 1. A method of forming a dielectric layer on a patterned substrate in a chamber, comprising:
exposing the patterned substrate to a silicon-containing precursor in the presence of a plasma to deposit a silicon-containing
layer on the patterned substrate, wherein the silicon-containing precursor comprises octamethylcyclotetrasiloxane;
purging the silicon-containing precursor from the chamber;
treating the silicon-containing layer with a plasma from an oxygen-containing gas; and
repeating the exposing the patterned substrate to the silicon-containing precursor in the presence of the plasma to deposit
the silicon-containing layer, the purging the silicon-containing precursor from the chamber, and the treating the silicon-containing
layer until a desired thickness of the dielectric layer is obtained.
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