| US 7,601,629 B2 | ||
| Semiconductive device fabricated using subliming materials to form interlevel dielectrics | ||
| Deepak A. Ramappa, Dallas, Tex. (US); Richard L. Guldi, Dallas, Tex. (US); Asad Haider, Plano, Tex. (US); and Frank Poag, Plano, Tex. (US) | ||
| Assigned to Texas Instruments Incorporated, Dallas, Tex. (US) | ||
| Filed on Dec. 20, 2005, as Appl. No. 11/312,926. | ||
| Prior Publication US 2007/0141829 A1, Jun. 21, 2007 | ||
| Int. Cl. H01L 21/4763 (2006.01) | ||
| U.S. Cl. 438—619 [257/758; 257/E23.144] | 16 Claims |
| 1. A method of fabricating a semiconductive device, comprising:
depositing a hydrocarbon layer over a semiconductive substrate;
patterning the hydrocarbon layer to define an interconnect structure;
etching the patterned hydrocarbon layer to form openings in the hydrocarbon layer;
depositing an interconnect structure within the openings of the hydrocarbon layer; and
completely removing a remaining hydrocarbon layer by sublimation at about room temperature.
|